PART |
Description |
Maker |
ENN7483 |
Bipolar Transistor, -12V, -1A, Low VCE(sat) PNP Single MCPH3
|
ON Semiconductor
|
NP1-6 NP2.8-12 NP12-6 NP7-12 NPL38-12 NP38-12 NP65 |
BLEIAKKU 6V 250G BATTERY 12V 2.8AH BATTERY 6V 12AH BLEIAKKU 12V 2800G BLEIAKKU NPL 12V 14.7KG BLEIAKKU 12V 13800G BLEIAKKU 12V 22700G BLEIAKKU 6V 2200G BLEIAKKU 12V 4000G BLEIAKKU 12V 6.3KG BLEIAKKU 12V 5000G BLEIAKKU 12V 900G BATTERY 6V 7AH BATTERY 12V 2.3AH 蓄电2V 2.3AH BLEIAKKU NPL 12V 24KG BLEIAKKU不良贷款12V4公斤
|
Yuasa Battery, Inc.
|
2N744 BSX28 WA9002 2N4917 WA9001 2N834 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 200MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-230AA TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 200MA I(C) | TO-106VAR TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-230AA 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
|
Electronic Theatre Controls, Inc.
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
NE85618 NE85619 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-23VAR From old datasheet system
|
NEC Electron Devices
|
CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington SMD Bipolar Power Transistor NPN Darlington SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
PQ12SZ5T |
VOLT REGULATOR|FIXED| 12V|BIPOLAR|SIP|3PIN|PLASTIC 电压调节器|定额| 12V的|双极|园区| 3针|塑料 12 V FIXED POSITIVE REGULATOR, PSSO2
|
STMicroelectronics N.V. SHARP ELECTRONICS CORP
|
IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
NE024027-28 NE020214-07 NE020790-07 NE020791-07 NE |
TRANSISTOR | BJT | NPN | 6A I(C) | STX-M4 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 750MA I(C) | TO-39 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 1.5A I(C) | SOT-119VAR TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 1.5A I(C) | RFMOD 晶体管|晶体管|叩| 18V的五(巴西)总裁| 1.5AI(丙)| RFMOD TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 1.5A I(C) | STX-M3 晶体管|晶体管|叩| 18V的五(巴西)总裁| 1.5AI(丙)|希捷- M3 TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 750MA I(C) | STX-M3 晶体管|晶体管|叩| 18V的五(巴西)总裁| 750mA电流一(c)|希捷- M3 TRANSISTOR | BJT | NPN | 750MA I(C) | STX-M3 晶体管|晶体管|叩| 750mA电流一(c)|希捷- M3 TRANSISTOR | BJT | NPN | 15A I(C) | SOT-119VAR 晶体管|晶体管|叩| 15A条一(c)|的SOT - 119VAR
|
Electronic Theatre Controls, Inc. TE Connectivity, Ltd.
|